发明名称 METHOD FOR CORRECTING DEFECT OF HALFTONE PHASE SHIFT MASK AND HALFTONE PHASE SHIFT MASK
摘要 PROBLEM TO BE SOLVED: To minimize the influence of a method for correcting defects on transfer patterns by providing a phase shift mask with light shielding films in a shape to completely cover void defects and to partially cover the end of the plural opening patterns adjacent to the patterns. SOLUTION: The void defect 3 exists on the halftone phase shift line patterns 2 of the mask patterns 1. A defect correcting part 4 and correcting parts 5, 6 for correcting the shape are formed out of carbon films in this part by using a correction method by light shielding. The correcting parts 5, 6 for correcting the shape are formed by the method similar to the method for forming the defect correcting part 4. While these correcting parts are separate patterns in terms of design and have a separate kind of role, the correcting parts are formable simultaneously with the defect correcting part 4 in terms of the forming stage and there is no need for newly adding the stage. Optimum sizes are determined for the size of the correcting parts 5, 6 for correcting the shape according to the size of the defect correcting part 4. The widths A, A' of the correcting parts 5, 6 for correcting the shape suffice usually with the values within a range of 0.02 to 0.1μm and A, A' suffice with the same value.
申请公布号 JPH0980741(A) 申请公布日期 1997.03.28
申请号 JP19950231312 申请日期 1995.09.08
申请人 TOPPAN PRINTING CO LTD 发明人 FUKUSHIMA YUICHI
分类号 G03F1/32;G03F1/36;G03F1/68;G03F1/70;G03F1/72;H01L21/027 主分类号 G03F1/32
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