| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser excellent in characteristics by obtaining a good crystal when a second clad layer of AlGaInP is regrown after formation of an inner stripe type current block layer regardless of the kind of material being employed in the current block layer depending on the design purpose of semiconductor laser. SOLUTION: Upper and lower clad layers 2, 4, 6, an active layer 3 and at least a part of a current block layer 4 touching the upper clad layer 6 constituting a semiconductor laser are composed of a compound semiconductor represented by a composition formula: (Alx Ga1-x )y In1-y P (0<x<=1: y is about 0.5), where x takes a predetermined value within a range 0<x<=1 for upper and lower clad layers, 0<=x<1 for active layer, and 0<x<=0.75 for the part of current block layer touching the upper second clad layer. |
