| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a monolithic light emitting diode array in which the depth of pn junction can be controlled accurately for each light emitting diode while suppressing fluctuation. SOLUTION: An SiO2 selective growth mask 12 is formed on an n-GaAs substrate 10. The mask 12 has a window 14 for exposing a light emitting region, an isolating part 16 covering the isolating region around the light emitting region, a pad part 18 covering a bond pad region, and a lead-out part 20 covering an electrode lead-out region. An n-InGaP clad layer, a nondoped InGaAsP active layer, a p-InGaP clad layer and a p-GaAs contact layer are then grown sequentially on the exposed substrate 10. These semiconductor layers constituting a light emitting diode having double heterostructure are epitaxially grown selectively such that they are not grown on the mask 12 by regulating the width of mask 12, the temperature and pressure of epitaxial growth appropriately. The problem can be solved because each light emitting diode can be formed while being isolated not by diffusion but by selective epitaxial growth. |
