| 摘要 |
PROBLEM TO BE SOLVED: To control the distribution of silicon nanocrystal particle size in gas phase by irradiating a silicon oxide containing silicon nanocrystal with a laser light of specified wavelength in an atmosphere containing oxygen and oxidizing the surface of silicon nanocrystal of such size as absorbing the laser light thereby controlling the particle size thereof. SOLUTION: Silicon nanocrystal having interband pumping energy lower than the energy hν of laser light is oxidized to reduce the particle size thereof substantially. When the particle size decreases furthermore, the interband pumping energy of silicon nanocrystal increases gradually and at a moment of time when it exceeds the hν, the laser light is not absorbed nor the oxidation proceed. When a laser light having wavelength of 500nm or less is used, particle size of the silicon nanocrystal can be arranged at 5nm or less. |
