| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of the manufacturing processor of an SRAM cell by using the common gate electrode of bulk transistors as the gate electrode of a thin film transistor. SOLUTION: An SRAM cell is constituted of first and second bulk transistors formed on a semiconductor substrate 1 and a thin film transistor formed on the second bulk transistor. The first and second bulk transistors are composed of a first gate oxide film 3 formed on an active area, a common gate electrode 5, and first and second impurity areas 7 and 9 respectively used as source and drain areas. The thin film transistor uses the common gate electrode 5 as a gate electrode and is composed of a second gate oxide film 11 and a conductive layer 13 which is used as a source area, a drain area, and a channel area. Therefore, the number of the manufacturing processes of the SRAM cell can be reduced and, at the same time, an accurate offset alignment can be performed easily. |
