A METHOD FOR MANUFACTURING FOR THERMAL SENSOR USING SEMICONDUCTOR DIODE

摘要

The present invention provides a method of making a temperature sensor using a semiconductor diode that can measure a temperature on the basis of the fact that leakage current measured during reverse bias voltage application is dependent on the temperature. This method includes the steps of forming an n- or p-type impurity highly doped well (2) on a silicon substrate (1); forming an isolation oxide film (3) by applying isolation process to a region except the well (2)'s certain region; forming a semiconductor diode by forming an opposite-type impurity lightly doped diffusion layer (4); etching the oxide film (3)'s given portion to expose the well (2) to make the well (2) contact well-pickup metal line to form a well pickup region (5); forming a metal layer (6) on the region (5), the oxide film (3) and the diffusion layer (4); and etching the metal layer (6)'s given portion to isolate a first metal line (6a) on the well pickup region (5) from a second metal line (6a), thus forming a temperature sensor.