SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To suppress a semiconductor device on which a transistor, a capacitor element, a resistor element and so on are together mounted, for minimizing its occupying area and for reducing its manufacturing cost. SOLUTION: A MOS transistor comprises a gate oxide film and a gate electrode 9 being laminated a first conductive film and a second conductive film. A capacitor element comprises a lower capacitive electrode 4b formed by the first conductive film, a capacitive film 5a formed by an insulating film which is different from the gate oxide film, an upper capacitive electrode 7b formed by the second conductive film on a capacitive film 5a and a lead electrode 7C for the lower capacitive electrode formed by the second conductive film. As the capacitive film 5a made of nitrous film and so on which is different from the gate oxide film remains interposed, it can be formed by the same steps as the case of the capacitive film being made from the gate oxide film. Therefore the occupying area is reduced by using the capacitive film having a large capacity per unit area and the enlargement of manufacturing cost can be suppressed.