| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain large electromotive force with a relatively small area by utilizing a voltage generated between the first semiconductor region of a first photoelectric generator and the fourth semiconductor region of a second photoelectric generator on the basis of an incident light. SOLUTION: When a thin film semiconductor that an inverted layer formed by a gate electrode is very thin (normally 10nm or less) is used for a photocell, a diffused layer may be provided only at one side since the inverted layer is very thin, and the size of a depression region between a P<+> type region 20 and an N<+> type region 24 may sufficiently be increased. Accordingly, the electromotive force per unit of the photocell can be increased. Since the reflected light returned from the boundary between a semiconductor thin film 16 and a gate insulating film 14 and the boundary between the film 14 and the gate electrode 12 can be effectively used, the generating efficiency is improved as compared with conventional photocell. |
