| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor element, in which a leakage current by optical irradiation is reduced, and manufacture thereof. SOLUTION: A gate electrode 102 and a gate insulating film 103 are formed onto a light-transmitting insulating substrate 101 in specified shapes respectively, a semiconductor film 104 and a channel protective film 105 are formed successively on the gate insulating film 103, and overexposure is conducted from the light-transmitting insulating substrate 101 side while using the gate electrode 102 as a mask and the channel protective film 105 is patterned in a specified shape in a self-alignment manner. Dosage is adjusted so that a first ion implanting layer having first conductivity is formed on the channel protective film 105 side of the semiconductor film 104 while using the channel protective film 105 as a mask and a second ion implanting layer having second conductivity lower than the first conductivity is shaped on the gate insulating film 103 side of the semiconductor film 104 and impurity ions are doped, and a thin-film semiconductor element, in which a source electrode 108 and a drain electrode 109 are formed onto the second ion implanting layer, is manufactured.</p> |
