| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensing element wherein propagation delay of a vertical transfer clock is restrained and high quality picture, high sensitivity and high resolution of a CCD solid state image sensing element are enabled. SOLUTION: This solid state image sensing element is constituted of a light receiving part 1, a vertical transfer resistor 2, and a third polysilicon electrode 10 which is formed, as one example, in the central part of an image sensing region. The third polysilicon electrode 10 is constituted by being connected to a transfer clockϕ3 through a new connection part 11, and can be driven also from the central part of the image sensing region via the new connection part 11. Thereby propagation delay of a transfer clock is not generated, the stable image sensing of a CCD solid state image sensing element is enabled by stably applying the transfer clock, and the high speed driving of the CCD solid state image sensing element is enabled.
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