发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the matching characteristics of a MOSFET which constitutes a differential couple by a method wherein the output of the first differential output detection circuit is applied to the substrate of the second MOSFET, and the output of the second differential output detection circuit is applied to the substrate of the first MOSFET. SOLUTION: A differential output detecting circuit 65 detects the output OUT bar of the differential circuit generated on the drain of a MOSFET 61, and the DC bias in proportion to this output is applied to the substrate of a MOSFET 52. Also, a differential output detecting circuit 66 detects the output OUT of the differential circuit generated on the MOSFET 62, and the DC bias in proportion to this output is applied to the substrate of the MOSFET 61. As a result, a small DC bias is applied to the substrate of the MOSFET having large threshold voltage when a substrate bias is not applied, a large DC bias is applied to the substrate of the MOSFET having a small threshold voltage, substrate side potentialϕP is applied, and the threshold voltage when substrate bias is applied becomes almost equal.
申请公布号 JPH0982809(A) 申请公布日期 1997.03.28
申请号 JP19950237219 申请日期 1995.09.14
申请人 TOSHIBA CORP 发明人 ITO NOBUYUKI
分类号 H01L27/088;H01L21/8234;H03F3/45;H03K19/0944;(IPC1-7):H01L21/823;H03K19/094 主分类号 H01L27/088
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