| 摘要 |
PROBLEM TO BE SOLVED: To prevent decrease of dielectric constant and generation of leak current, by adding metal ions whose valence is 3-4 and which can be replaced by B site metal ions whose valence is 4, in a perovskite metal oxide film. SOLUTION: An element isolation insulating film 102, a gate insulating film 103, a gate electrode 104, and N-type diffusion layers 105, 106 are formed on a P-type single crystal silicon substrate 101, and a silicon oxide film 107 is deposited. A contact hole 108 is formed and a Ti silicide film 109 is formed. A bit line 110, a CVD oxide film 111 and a contact hole 112 are formed, and an extraction electrode 113 is formed. A Ti film 114, a TiN film 115 and a lower capacitor electrode 116 are formed on the whole surface. A thin insulating film is formed on the whole surface, as a capacitor insulating film 117 which contains Fe of about 1wt.% and is 20nm thick. The thin insulating film has ABO3 type perovskite crystal structure wherein Ba and Sr ions are positioned in the A site and Ti ions are positioned in the B site. Thereby a semiconductor device of high reliability can be realized when the film is thinned. |
