| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an exposure mask with which the groove parts for groove wirings are formable by one time of lithography and one time of dry etching and a process for producing a semiconductor device by using this exposure mask. SOLUTION: The manufacture of the exposure mask is executed by forming a translucent film 2 consisting of chromium oxide on one surface side of a mask substrate 1, then forming a light shielding film 3 consisting of metal chromium on this translucent film, thereby forming a blank mask. The light shielding film of the parts corresponding to the groove wirings of the interlayer insulating film of this blank mask is removed by dry etching to expose the translucent film and thereafter, the exposed parts of the translucent film are partly etched away. As a result of it, the fully transmissible parts 1a consisting of the mask substrate alone, the translucent parts 2a where the mask substrate and the translucent film overlap on the outer side thereof and further, the light shielding parts 3a where the mask substrate, the translucent film and the light shielding film overlap are formed. The semiconductor device is produced by executing groove wiring after a lithography stage of the resist using this exposure mask and an anisotropic etching stage to be executed from above the resist.</p> |
