| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform accurate semiconductor element simulation by almost the same calculation time as conventional simulation and to improve the efficiency of semiconductor element design. SOLUTION: By providing a segregation parameter setting means 111 for individually setting segregation parameters for materials piled up on a semiconductor surface and a semiconductor, an impurity density setting means 112 for individually setting the density parameters of impurities corresponding to the segregation parameters and an impurity density deciding means 113 for deciding impurity density from the impurity density parameters, individually setting the segregation parameters for the materials piled up on the semiconductor surface and the semiconductor and performing the simulation, the simulation is accurately performed by almost the same calculation time as before.</p> |
