| 摘要 |
PROBLEM TO BE SOLVED: To relieve film stress applied to an IC part which is caused by an SiO2 film, by a method wherein an SiO2 film whose film thickness is greater than or equal to a specified value is formed on the substrate of a waveguide forming part and an IC forming part, and then the SiO2 film of an IC part is thinned or perfectly eliminated. SOLUTION: An SiO2 protective film 11-2 of an IC part is thinned as compaired with an SiO2 film 11-1 which is a buffer layer of a waveguide, and the film thickness is made at most 1μm. Hence the stress applied to an element of the IC part can be relieved. Thereby an optical element, a photodiode and an IC can be integrated on the same substrate by using an optical waveguide, without generating the change of characteristics of an electronic circuit element, which can contribute to the miniaturization of an optical pickup.
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