A METHOD FOR MANUFACTURE OF SWITCHING SEMICONDUCTOR

摘要

This invention is about a manufacturing method of an internal total reflection type semiconductor optical switch using refraction ratio change of an optical wave guide by injection current. The method includes the steps of: raising an InGaAsP optical wave guide layer(2) not doped by epitaxy method and an InP clad layer(3) by order on the 1st-type InP substrate(1); etching a certain region of the clad layer(3) on which an optical detector is to be formed; forming the 2nd-type diffusion region by raising an InGaAsP cap layer(4) not doped by epitaxy method and diffusing dopant on a certain region of the cap layer(4); forming a pn junction of an optical switch and an optical detector and forming an optical wave guide by etching the cap layer(4) and the clad layer(3); and forming the 1st-type electrode(5) and the 2nd-type electrode(13).