| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to deposit a platinum film, which is superior in the coverage of a stepped surface and is formed by a chemical vapor phase growth method, by a method wherein the platinum film, which is made from a Pt (HFA)2 , is formed by the chemical vapor phase growth method. SOLUTION: A gas control device 24 is provided with a raw material container 26 filled with a hexafluoroacetylacetone platinum (Pt (HFA)2 ) which is a metallic raw material. This container 26 is placed in the interior of a constant temperature bath 28 for heating this container 26 to 150 to 200 deg.C or thereabouts. At the time of the formation of a thin film, the pressure in a film- forming chamber 10 is reduced by vacuum pumps 12 and thereafter, a substrate 14 to be deposited with a platinum film is heated by a heater of a susceptor 16. Then, Ar gas, which is carrier gas, is flowed by a prescribed flow rate and is introduced in the chamber 10 along with the sublimed Pt (HFA)2 . Simultaneously with this introduction, H2 gas is introduced in the chamber 10 through a gas supply piping 18, whereby the Pt (HFA)2 reacts with the H2 gas on the substrat 14 and the platinum film is deposited on the substrate 14. |
