Widerstand für eine integrierte Schaltung

摘要

A resistor (1) comprised of a diffused impurity region (1a) in a semiconductor substrate, an insulated gate (5) surrounding and defining the resistor, and a pair of separated conductive contacts (9) to the diffused region within the boundary of the insulated gate for applying and receiving current passing through the resistor. The gate structure reduces leakage current from the resistor to the substrate.