| 摘要 |
An amorphous insulator (4) is formed on a substrate (1; 1, 2, 3) and has windows where the substrate (1; 1, 2, 3) is exposed. On the exposed parts (40) of the substrate and the insulator (4), a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent is formed to form a semiconductor material (1, 5, 51, 52). A semiconductor device is fabricated by processing the semiconductor material (1, 5, 51, and 52) or a semiconductor material (6 and 7) formed on the semiconductor material (1, 5, 51, and 52). |
