发明名称 WIRING STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To prevent falling or separating of a pattern from being generated at the time of development for forming a resist pattern or even at the time of washing in water or the like after a wiring pattern is formed by making the terminal part of a wiring wider than the dimension to be left in the minimum design rule. SOLUTION: The terminal part of a wiring pattern is made wider than the width to be left in the minimum design rule of a wiring. That is, the terminal part of a pattern is made into the wiring structure as formed of a cover part 40 for performing connection between layers. Therefore, since the cover part 40 is a part for performing connection between layers, it is terminated by a pattern wider than at least the dimension (a) 31 to be left in the minimum design rule of a wiring. Accordingly, it can be made into the wiring structure in which the contact area with a substrate in the terminal part is large and the adhesion of a substrate is strong.
申请公布号 JPH0982710(A) 申请公布日期 1997.03.28
申请号 JP19950235228 申请日期 1995.09.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANAKA YOSHINORI
分类号 H01L21/3205;H01L21/8242;H01L23/52;H01L27/108 主分类号 H01L21/3205
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