| 发明名称 |
Anordnung mit einem pn-Übergang und einer Maßnahme zur Herabsetzung der Gefahr eines Durchbruchs des pn-Übergangs |
| 摘要 |
The invention relates to a device with a P-N junction and a means for reducing the risk of breakdown of the junction. The device proposed consists of a combination of a magnetoresistor (4) and a stop electrode (5) which have multi-step edges (40 and 50, respectively) with JTE technology, thus enabling blocking voltages significantly higher than 2500 volts to be achieved while requiring little space.
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| 申请公布号 |
DE19535322(A1) |
申请公布日期 |
1997.03.27 |
| 申请号 |
DE19951035322 |
申请日期 |
1995.09.22 |
| 申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
PFIRSCH, FRANK, DR., 81545 MUENCHEN, DE |
| 分类号 |
H01L29/73;H01L21/331;H01L29/06;H01L29/40;H01L29/78;H01L29/861;(IPC1-7):H01L29/10 |
主分类号 |
H01L29/73 |
| 代理机构 |
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