Thin film liquid crystal display of an active type
摘要
The display has a silicon oxide base film formed on a glass substrate 101. The substrate is then covered by an amorphous silicon film to form an active layer 102 and is then crystallised using laser light. A silicon oxide film is 100 overlaid as a gate isolation film. A wiring layer in sections is formed to create gate electrodes 106,107,108 in aluminium foil and these are then processed with resistive masking 103,104, 105 to form the required structure.
申请公布号
DE19638433(A1)
申请公布日期
1997.03.27
申请号
DE1996138433
申请日期
1996.09.19
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., ATSUGI, KANAGAWA, JP