发明名称 Electron beam lithography apparatus for LSI, VLSI and ELSI circuit manufacture
摘要 The apparatus includes several field emission electron sources, each containing needle-shaped cathodes, and the electron gun generates an electron beam of shaped cross-section secured by a perforated shadow mask. A projection lens focusses the images of a perforation of the shadow mask onto a material to be structured. Between the electron gun and the projection lens is located a condenser lens assisting to focus the images of the electron emission regions at the front focal point of the projection lens. An electron beam deflector determines a position, at which the images of the perforation are focussed on the materials.
申请公布号 DE19638109(A1) 申请公布日期 1997.03.27
申请号 DE19961038109 申请日期 1996.09.18
申请人 JEOL LTD., TOKIO/TOKYO, JP 发明人 TANAKA, KAZUMITSU, TOKIO/TOKYO, JP;TAKASHIMA, SUSUMU, TACHIKAWA, TOKIO/TOKYO, JP;ABE, JUNJI, TOKIO/TOKYO, JP
分类号 H01J37/317;(IPC1-7):H01J37/317;H01L21/302 主分类号 H01J37/317
代理机构 代理人
主权项
地址
您可能感兴趣的专利