发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
In an integrated circuit device using a plurality of different power supply voltages, the application of an input voltage exceeding the power supply voltages to an input/output circuit is prevented. When a p-type substrate is used, a plurality n-wells are formed to surround an integrated circuit region on a central portion of the substrate. When an n-type substrate is used, a plurality of p-wells are formed in the same manner. A predetermined power supply voltage is applied to each well to select transistors of the input/output buffer in accordance with the voltage level of an external voltage. <IMAGE> |
申请公布号 |
KR970004454(B1) |
申请公布日期 |
1997.03.27 |
申请号 |
KR19930005052 |
申请日期 |
1993.03.30 |
申请人 |
TOSHIBA KK.;TOSHIBA MICRO ELECTRONICS KK. |
发明人 |
TANAKA, YASUNORI;UCHINO, YUKINORI;MORI, TOSHIAKI;SAKAI, IZUMI |
分类号 |
H01L21/8238;H01L21/822;H01L27/02;H01L27/04;H01L27/092;H01L27/118 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|