| 摘要 |
In a conductive film etching method of semiconductor fabrication processes, which injects etching reagent into a high vacuumed reaction chamber and makes the injected etching reagent into plasma by applying electric fields, or electromagnetic fields, or microwaves, the present method uses HCFC(hydrogen carbon fluoro chloride) gas or HFC(hydrogen fluoro carbon) gas as the etching reagent.
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