| 摘要 |
Method and apparatus for removal of remaining photoresist material and halogen residues (9) after etching from a polysilicon or metallized wafer (15, 35, 55). Exposed portions of the wafer substrate (8), not covered by photoresist material, are etched by exposing the wafer to a first, halogen-containing plasma (PS1), such as HBr or C>m<H>n<Br>2m+2-n"< for a first selected time interval. The wafer is exposed to a second plasma (PS2), containing H>2<O as the primary constituent, for a selected second time interval. Optionally, this second plasma may also contain O>2<, H>2<, OH and/or H>2<O>2< as another constituent. Hydrogen radicals and other radicals interact with the remaining photoresist material and with any free halogen and halogen-containing molecules on the wafer to produce reaction products that are removed from the wafer. Each plasma (22, 44, 62, 64) is maintained as an approximately planar body by imposing a time-varying magnetic field and, optionally, a time-varying electrical field on the plasma in directions approximately perpendicular to an exposed surface of the wafer. The processes of etching and of removal of photoresist and halogen residues may be carried out in two separate chambers (11, 31) or in a single chamber (51), with the wafer being maintained in different temperature ranges for the two processes. |
