发明名称 |
Apparatus and method for producing single crystal using Czochralski technique |
摘要 |
A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal 2 is controllable with ease and a good accuracy, which puller comprises a crucible 3 containing raw material, heater 4 for melting by heating the raw material and a heat insulating cylinder 5 surrounding them, the heat insulating cylinder 5 being cross-sectionally divided by an annular separation gap or gaps 8 into parts I, II, III, and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller. <IMAGE> <IMAGE> |
申请公布号 |
EP0747515(A3) |
申请公布日期 |
1997.03.26 |
申请号 |
EP19960303990 |
申请日期 |
1996.06.03 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
SAKURADA, MASAHIRO;OOTA, TOMOHIKO;TAKANO, KIYOTAKA;KIMURA, MASANORI |
分类号 |
C30B15/00;C30B15/14;C30B33/02;(IPC1-7):C30B15/14;C30B29/40 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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