| 发明名称 |
Method for radiofrequency wave etching |
| 摘要 |
<p>A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching. <IMAGE></p> |
| 申请公布号 |
EP0764968(A2) |
申请公布日期 |
1997.03.26 |
| 申请号 |
EP19960112566 |
申请日期 |
1996.08.02 |
| 申请人 |
MICHIGAN STATE UNIVERSITY;SAINT-GOBAIN/NORTON INDUSTRIAL CERAMICS CORPORATION |
发明人 |
REINHARD, DONNIE K.;ASMUSSEN, JES;CHAKRABORTY, RABINDRA N.;GOLDMAN, PAUL D. |
| 分类号 |
H05H1/46;C23F4/00;C30B33/12;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
