Semiconductor device having crystalline thin film transistors

摘要

A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.