发明名称 Method for producing thin-film electro luminescent device
摘要 The present invention is directed to a method and an apparatus for producing thin-film EL devices with short annealing treatment times and excellent productivity. A substrate to be subjected to annealing treatment is mounted on the surface of a stage. The substrate to be treated is constructed by forming lower electrodes, a lower insulating layer, an EL layer and an upper insulating layer in that order on a translucent substrate. Light-irradiating means is provided above and opposite the surface of the stage. The light-irradiating means includes a plurality of light sources and a reflecting panel, and the light sources are situated along each of a plurality of concavities provided in the reflecting panel. Light from the light sources irradiates roughly the entire surface of the substrate to be treated. The light from the light sources is selected so as to include the absorption wavelength band of the electrode material of the lower electrodes on the substrate. When a prescribed temperature is reached, the light irradiation is terminated to allow cooling.
申请公布号 US5614133(A) 申请公布日期 1997.03.25
申请号 US19950415473 申请日期 1995.03.31
申请人 SHARP KABUSHIKI KAISHA 发明人 TANAKA, KOICHI;YOSHIDA, MASARU
分类号 H05B33/10;H05B33/12;H05B33/14;(IPC1-7):G09K11/00 主分类号 H05B33/10
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