发明名称 |
Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors |
摘要 |
An improved control gate-addressed CMOS memory cell is provided which allows for programming and erasing by tunneling through the gate oxides of the PMOS and NMOS transistors. The CMOS memory cell (400) includes a PMOS transistor (402), an NMOS transistor (403), and an NMOS pass transistor (405). A capacitor (430) has a first terminal coupled to a common floating gate (416) of the PMOS and NMOS transistors and has a second terminal coupled to a control gate node.
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申请公布号 |
US5615150(A) |
申请公布日期 |
1997.03.25 |
申请号 |
US19950551974 |
申请日期 |
1995.11.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIN, JONATHAN;BARSAN, RADU |
分类号 |
G11C16/04;H01L27/115;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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