TARGET FOR SPUTTERING TUNGSTEN SILICIDE

摘要

PROBLEM TO BE SOLVED: To provide a target for sputtering having small particle number and causing no cracks by preparing a tungsten silicide sintered body having a specified half-value width for the Si (220) peak in X-ray diffraction analysis. SOLUTION: A tungsten silicide powder produced by mixing and firing a Si powder and a W powder having about <16μm particle size is hot pressed in 1×10<-4> to 1×10<-3> Torr vacuum atmosphere under about 200 to 400kg/cm<2> pressure at about 1350 to 1420 deg.C. The hot-pressed body is cooled to about 500 deg.C at about 3 to 10 deg.C/min cooling rate to obtain a tungsten silicide sintered body having 0.250-0.300 deg. half-value width of the Si (220) peak in X-ray diffraction analysis. By using the obtd. sintered body as a target, an excellent WSi2 thin film having little particle numbers can be formed at a fast rate.