| 发明名称 |
Sputtering apparatus for forming metal lines |
| 摘要 |
A vacuum sputtering apparatus for forming metal lines on a semiconductor wafer, including an annular reactive gas injector and a silicon carbide chuck for direct uniform heating of the wafer to a high temperature, preferably in the range of approximately 500 DEG C. to 800 DEG C., thereby allowing the deposition of titanium and titanium nitride layers having uniform thickness and composition.
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| 申请公布号 |
US5614070(A) |
申请公布日期 |
1997.03.25 |
| 申请号 |
US19950449839 |
申请日期 |
1995.05.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON, JONG |
| 分类号 |
H01L21/285;C23C14/00;C23C14/06;C23C14/16;C23C14/50;C23C14/54;H01J37/34;H01L21/203;H01L21/363;H01L21/768;H01L23/522;(IPC1-7):C23C14/34;C23C14/56 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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