发明名称 |
Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
摘要 |
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated chelated ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
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申请公布号 |
US5614352(A) |
申请公布日期 |
1997.03.25 |
申请号 |
US19940366614 |
申请日期 |
1994.12.30 |
申请人 |
HOECHST CELANESE CORPORATION |
发明人 |
RAHMAN, M. DALIL |
分类号 |
C08G8/00;C08G8/08;C08L61/06;G03F7/023;(IPC1-7):G03F7/30;G03F7/004 |
主分类号 |
C08G8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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