发明名称 Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
摘要 The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated chelated ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
申请公布号 US5614352(A) 申请公布日期 1997.03.25
申请号 US19940366614 申请日期 1994.12.30
申请人 HOECHST CELANESE CORPORATION 发明人 RAHMAN, M. DALIL
分类号 C08G8/00;C08G8/08;C08L61/06;G03F7/023;(IPC1-7):G03F7/30;G03F7/004 主分类号 C08G8/00
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