发明名称 PRODUCTION OF II-VI OR III-V COMPOUND SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To decrease defects in a crystal by coating the inner surface of a crucible with a vitreous material having a low softening point in which a powder having a higher melting point than a polycrystalline compd. is dispersed, introducing a polycrystalline compd. into the crucible, heating the compd. to melt it, and cooling it to grow a single crystal. SOLUTION: A mixture liquid is prepared by adding a solvent such as alcohol to a mixture of a solid powder such as a BN powder having about 0.05-50μm average particle size and higher melting point than a polycrystal line compd., a B2 O5 powder having a lower softening point than the polycrystalline compd. and an SrO2 powder by about 5-60mol% of the mixture. The mixture soln. is applied on the inner surface of a crucible and heated at about 300-1200 deg.C in an oxidative atmosphere to cover the inner surface of the crucible with a coating film of the mixture layer comprising a vitreous material dispersed with solid powders. Then, a seed crystal of a II-VI compd. such as CdTe or a III-V compd. such as GaAs is disposed in the crucible, into which a polycrystalline II-VI compd. or III-V compd. is added. The crucible is sealed in an ampule and the compd. is molten by a VB method or the like to grow a single crystal to obtain a single crystal of the II-VI compd. or the III-V compd.
申请公布号 JPH0977596(A) 申请公布日期 1997.03.25
申请号 JP19950233043 申请日期 1995.09.11
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KAWASE TOMOHIRO
分类号 C30B11/00;C30B27/00;C30B29/40;C30B29/48;H01L21/208;H01L21/368;(IPC1-7):C30B29/48 主分类号 C30B11/00
代理机构 代理人
主权项
地址