发明名称 |
Method of making a planar wiring in an insulated groove using alkylaluminum hydride |
摘要 |
A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.
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申请公布号 |
US5614439(A) |
申请公布日期 |
1997.03.25 |
申请号 |
US19950393928 |
申请日期 |
1995.02.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MUROOKA, FUMIO;ASABA, TETSUO;MATSUMOTO, SHIGEYUKI;IKEDA, OSAMU;ICHISE, TOSHIHIKO;SAKASHITA, YUKIHIKO;INOUE, SHUNSUKE |
分类号 |
H01L21/00;H01L21/285;H01L21/677;H01L21/768;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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