发明名称 |
Metal-to-metal antifuse with conductive |
摘要 |
According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers, According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
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申请公布号 |
US5614756(A) |
申请公布日期 |
1997.03.25 |
申请号 |
US19940284054 |
申请日期 |
1994.08.01 |
申请人 |
ACTEL CORPORATION |
发明人 |
FOROUHI, ABDUL R.;HAWLEY, FRANK W.;MCCOLLUM, JOHN L.;YEN, YEOUCHUNG |
分类号 |
H01L21/768;H01L23/525;H01L23/532;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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