发明名称 |
HYDROGEN ION DENSITY SENSOR |
摘要 |
Ion-sensing field effect transistor(10) generates electricity according to hydrogen-ion in solution. Amplifier(OP1) amplifies this transistor(10)'s output. The reference field effect transistor(20) puts hydrated gel not sensitive to hydrogen-ion of solution on the sensing film of ion-sensing field effect transistor, and forms the liquid-surface on a part of it. Amplifier(OP2) amplifies this transistor(20)'s output. Amplifier(OP3) causes differential amplification on amplifiers(OP1, OP2) automatically.
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申请公布号 |
KR970003739(B1) |
申请公布日期 |
1997.03.21 |
申请号 |
KR19930024865 |
申请日期 |
1993.11.20 |
申请人 |
KAS INC. |
发明人 |
KIM, CHOL;OH, SEUNG-CHOL;KANG, MYUNG-SUNG;HA, BYUNG-JOO |
分类号 |
H01L29/78;H01L29/82;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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