发明名称 HYDROGEN ION DENSITY SENSOR
摘要 Ion-sensing field effect transistor(10) generates electricity according to hydrogen-ion in solution. Amplifier(OP1) amplifies this transistor(10)'s output. The reference field effect transistor(20) puts hydrated gel not sensitive to hydrogen-ion of solution on the sensing film of ion-sensing field effect transistor, and forms the liquid-surface on a part of it. Amplifier(OP2) amplifies this transistor(20)'s output. Amplifier(OP3) causes differential amplification on amplifiers(OP1, OP2) automatically.
申请公布号 KR970003739(B1) 申请公布日期 1997.03.21
申请号 KR19930024865 申请日期 1993.11.20
申请人 KAS INC. 发明人 KIM, CHOL;OH, SEUNG-CHOL;KANG, MYUNG-SUNG;HA, BYUNG-JOO
分类号 H01L29/78;H01L29/82;(IPC1-7):H01L29/78 主分类号 H01L29/78
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