METHOD OF FORMING THE METAL WIRING ON THE SEMICONDUCTOR DEVICE

摘要

The present invention relates to a metallization for semiconductor device which is suitable for contact plugging with high aspect ratio, thus forming an Al thin film with excellent surface topology and high electro-migration resistance. The inventive metallization includes the steps of forming a barrier layer (5) in a contact hole formed on an insulating film (2) over a substrate (1); forming a 1st CVD Al layer (10) on the barrier layer (5); depositing a Cu layer (11) on the 1st CVD Al layer (10); and forming a 2nd CVD Al layer (12) on the Cu layer (11) to bury the contact hole.