| 摘要 |
(a) Many source/drain electrode(2) is formed on the selective region of the transparent insulation plate(1). (b) The P-layer(3) is formed on the surface of source/drain electrode. (c) After the semiconductor layer(4) is deposited on the overall surface, the first insulation film(6) is formed by the high frequency glow discharge or ECR. (d) The active layer(4a) is formed by patterning the n+ semiconductor layer(5) which be formed in the interface of source/drain electrode. (e) After the second insulation film(7) is applied with the oxide film on the overall surface, the metal is deposited on the second insulation film, and the gate electrode(8) is formed by patterning selectively.
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