METHOD OF FORMING THE METAL WIRING

摘要

The present invention provides a metallization which can solve the conventional step coverage problem by using a selective tungsten with excellent step coverage. This method includes the steps of forming a first insulating layer on a semiconductor substrate and forming a groove by masking; forming a conductive layer to a given thickness all over the surface; planarizing the overall surface with a fluid and exposing the first insulating layer by etching back the fluid and a part of the conductive layer; etching the conductive layer by using the fluid and the first insulating layer as a mask to remain the conductive layer on the groove's lower portion; removing the fluid; and depositing selective tungsten on the conductive layer, and forming a second insulating layer all over the surface.