METHOD OF MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE

摘要

A fabrication method of compound semiconductor device using high quality gold plating is disclosed. The method comprises the steps of: sequentially forming a first conducting layer(11) and a second conducting layer(12) on a compound semiconductor substrate(1); forming a gold pattern(4) on an exposed conducting layers by plating using a photoresist pattern(13) as a mask; forming a capping layer(21) on the gold pattern(4) and the photoresist pattern(13); removing the photoresist pattern(13); and etching the exposed first and second conducting layer(11, 12) using the remained capping layer(21) as a mask. Thereby, it is possible to decrease the number of mask and easily form fine and high quality gold pattern.