发明名称 MANUFACTURE FOR LASER DIODE
摘要 (a) The first conduction type clad layer(2) and the second conduction type active layer(3) is formed on the first conduction type subsrate(1). (b) After the second conduction type clad layer(4) is formed on the active layer, the upper part of inclined plane is etched to contain (110)plane and the inclined plane is etched to contain (111)plane. (c) After the clad layer is etched, the current limit layer(5) of even plane is formed by growing the current limit layer of the first conduction type. (d) The second conduction type cap layer(6) is formed on the current limit layer.
申请公布号 KR970003749(B1) 申请公布日期 1997.03.21
申请号 KR19930031532 申请日期 1993.12.30
申请人 LG SEMICONDUCTOR CO.,LTD. 发明人 LIM, SI-JONG
分类号 H01S5/30;(IPC1-7):H01S3/18;H01L33/00 主分类号 H01S5/30
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