Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung

摘要

A semiconductor device includes a substrate (1), a first layer (2) formed on the substrate and made of a semiconductor of a first conductive type, a second layer (3) formed on the first layer and functioning as a photoabsorption layer, a third layer (4) formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions (5) formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes (6) respectively formed on the regions and made of the same electrode material. A first electrode out of the electrodes receives a positive voltage to forward bias a first pin diode (PD2A, PD2B, A) out of the pin diodes and a second electrode out of the electrodes receives a negative voltage to reverse bias a second pin diode (PD1, B) out of the pin diodes so that the second pin diode operates as a pin photodiode.