Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten

摘要

The invention relates to a doping process for producing homojunctions in semiconductor substrates, into which dopants penetrate by diffusion, with a light source which has an emission spectrum containing ultra-violet components and which is directed towards the semiconductor substrate surface. The invention is characterised in that a mask is inserted between the semiconductor substrate to be doped and the light source and, depending on the areas of similar dopant concentration to be doped, has areas of varying thickness as well as through openings, that dopant atoms are inserted between the mask and the semiconductor substrate to be doped, and that for the purpose of diffusion doping the semiconductor substrate the mask surface is irradiated by the light source unit using rapid thermal processing.