METHOD OF FORMING THE ISOLATION ELEMENTS ON THE SEMICONDUCTOR DEVICE

摘要

(a) The pad oxide film(22) and the nitride film(23) is applied on the silicon substrate(21) in order. (b) The isolation part of the silicon substrate is opened by etching the nitride film, the pad oxide film partially. (c) The silicon substrate of the isolation region is removed lightly through etching. (d) The first and second side wall spacer(211,212) is formed sequently in the side of silicon substrate. (e) The epitaxial layer(25) is formed by making the silicon epitaxing on the bared surface through etching of the silicon substrate.