Infrarotsensor und Herstellungsverfahren dafür

摘要

The infrared ray sensor includes a sensor substrate (2) formed of an infrared ray transmitting material and having a first surface (2a) and a second surface (2b) which is in opposed relation to the first surface (2a), an infrared ray reflecting film (4) provided on the first surface (2a) of the sensor substrate (2), infrared ray detecting elements (7A, 7B) provided on the second surface (2b) of the sensor substrate (2), and an infrared ray transmitting window portion (3) formed in the infrared ray reflecting film (4) in relation to the infrared ray detecting elements (7A, 7B). The infrared ray which enters the inhared ray transmitting window portion (3) passes through the sensor substrate (2) and is then made incident on the infrared ray detecting elements (7A, 7B). Bridges (6A, 6B) are formed on the second surface (2b) of the sensor substrate (2). Each of the bridges (6A, 6B) is a silicon oxynitride film having a single layer configuration.