| 摘要 |
PROBLEM TO BE SOLVED: To manufacture the high reliable and brightness semiconductor light emitting element by improving the light emitting efficiency while suppressing the decline in element characteristics and reliability due to the oxidation of a current diffused layer. SOLUTION: The semiconductor light emitting element is provided with a current diffused layer 7 between a light emitting part 3a including an active lawyer 3 and a p-type electrode 11 while a current blocking layer 6 opposing to the electrode 11 is provided between the current diffused layer 7 and the light emitting part 3a furthermore, the current diffused layer 7 is composed of a compound semiconductor (GaP) including no Al at all making a larger gap than that of the light emitting part 3a. |
