| 摘要 |
PROBLEM TO BE SOLVED: To make the film thickness of a screen type capacitor sufficient and uniform, and improve the level of integration, by constituting the screen type capacitor of an almost vertical cylindrical lower electrode, a dielectric film, and an upper electrode, and making the interval between the screen capacitors smaller than the inner diameter of the lower electrode. SOLUTION: On a semiconductor substrate 1, a plurality of screen type capacitors are formed of almost vertical cylindrical lower electrodes 96, dielectric films 77, and upper electrodes 78. The interval between the screen type capacitors is made smaller than the inner diameter of the lower electrode 96. Thereby the space between the neighboring capacitors is reduced and the level of integration can be improved. During manufacturing, etchant is hard to permeate into the interval corresponding to the non-mask region of a mask to be used for patterning spacer material defining the form of the lower electrode 96, so that anisotropic etching in the vertical direction is excellently enabled. Thereby, the thickness of the capacitor lower electrode after etch back can be sufficieintly maintained. |
