| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor memory device having a large capacitor capacitance through a simple process by manufacturing a capacitor by deposing a conductive layer once in a space area formed by selectively removing a temporary film after forming the temporary film. SOLUTION: After a first insulating film 26 is formed on the entire surface of a substrate 20, a contact hole through which a source or drain area is exposed is formed by selectively etching the film 26 and a second insulating film 28 is formed on the entire surface of the substrate 20 so as to fill up the contact hole. Then a space area 30 is formed by selectively removing a first insulating film pattern 26A which is formed by patterning the insulating films 26 and 28. After the space area 30 is formed, a first conductive layer 31 is formed on the entire surface of the pattern 28A of the second insulating film 28 and the storage electrode 31A of a capacitor is formed by selectively etching the first conductive layer 31 by using the pattern 28A as a mask. Finally, the pattern 28A is removed and the induction-resistant film 32 and plate electrode 33 of the capacitor are formed. |
